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RFHIC launches 20W GaN-on-SiC power amplifier covering 20–1000MHz
RFHIC Corp of Suwon, South Korea, a manufacturer of gallium nitride and gallium arsenide active RF & microwave components and hybrid modules for telecom and broadcast markets, has introduced a molded GaN-on-SiC power amplifier generating 20W and covering the frequencies 20–1000MHz.
The RWS05020-10 is based on gallium nitride on silicon carbide (GaN-on-SiC) transistors, providing good reliability at high temperature, as well as 36dB of gain and a typical 43dBm @ P3dB with 50% efficiency. Moreover, the physical size is just 2.1” x 1” x 0.5”.
“RWS05020-10 is a miniaturized wideband amplifier, a newly developed hybrid,” says chief technical officer Dr Samuel Cho. RFHIC has incorporated pin types for both DC and RF port to make the product easy to use, he adds. The RWS05020-10 also has a bolted-down structure and operates at 28V with 51dBm @ OIP3.
RFHIC says that, as GaN devices are actively evolving, reliability is improving while they are also becoming more cost-effective. In addition, the firm has been developing more thermally robust designs, and the substrate material has been migrated from silicon to silicon carbide (SiC), enhancing reliability and efficiency further, directly addressing the increasing 'green' concerns of both policy makers and end users (who are also calling for smaller systems, without sacrificing performance). In particular, for sub L-band frequencies, there are many obstacles to be overcome in order to shrink the size of power amplifiers.
For more information, contact;
rfsales@rfhic.com
or a local sales representative in the near location.
www.rfhic.com/eng/support/network.php |
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